IPB08CN10N G
IPI08CN10N G
OptiMOS®2 Power-Transistor
IPP08CN10N G
Product Summary
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
V DS
100
V
R DS(on),max (TO263)
8.2
mΩ
ID
95
A
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB08CN10N G
IPI08CN10N G
IPP08CN10N G
Package
PG-TO263-3
PG-TO262-3
PG-TO220-3
Marking
08CN10N
08CN10N
08CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
95
T C=100 °C
68
Pulsed drain current2)
I D,pulse
T C=25 °C
380
Avalanche energy, single pulse
E AS
I D=95 A, R GS=25 Ω
262
Reverse diode dv /dt
dv /dt
I D=95 A, V DS=80 V,
di /dt =100 A/µs,
T j,max=175 °C
6
Gate source voltage3)
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.06
Unit
A
mJ
kV/µs
±20
V
167
W
-55 ... 175
°C
55/175/56
page 1
2008-06-23
IPB08CN10N G
IPI08CN10N G
Parameter
IPP08CN10N G
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
0.9
minimal footprint
-
-
62
6 cm2 cooling area 5)
-
-
40
100
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction 4) ambient (TO220, TO262, TO263)
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=130 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=100 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=95 A,
(TO263)
-
6.1
8.2
mΩ
V GS=10 V, I D=95 A,
(TO220, TO262)
-
6.4
8.5
-
1.5
-
Ω
57
113
-
S
Gate resistance
RG
Transconductance
g fs
1)
|V DS|>2|I D|R DS(on)max,
I D=95 A
J-STD20 and JESD22
2)
See figure 3
3)
Tjmax=150 °C and duty cycle D=0.01 for Vgs2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
200
160
140
150
120
100
g fs [S]
I D [A]
100
175 °C
80
60
25 °C
50
40
20
0
0
0
2
4
6
8
Rev. 1.06
0
40
80
120
160
I D [A]
V GS [V]
page 5
2008-06-23
IPB08CN10N G
IPI08CN10N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=95 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
IPP08CN10N G
parameter: I D
20
4
3.5
1300 µA
3
130 µA
2.5
V GS(th) [V]
R DS(on) [mΩ]
15
98 %
10
typ
2
1.5
5
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
Ciss
Coss
175 °C
175 °C, 98%
25 °C
102
I F [A]
C [pF]
103
25 °C, 98%
Crss
102
101
101
100
0
20
40
60
80
V DS [V]
Rev. 1.06
0
0.5
1
1.5
2
V SD [V]
page 6
2008-06-23
IPB08CN10N G
IPI08CN10N G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=95 A pulsed
parameter: T j(start)
parameter: V DD
100
12
50 V
10
25 °C
20 V
100 °C
150 °C
8
V GS [V]
I AS [A]
IPP08CN10N G
10
80 V
6
4
2
1
0
1
10
100
1000
0
20
40
60
80
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
115
V GS
Qg
V BR(DSS) [V]
110
105
V g s(th)
100
95
Q g(th)
Q sw
Q gs
90
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 1.06
page 7
2008-06-23
IPB08CN10N G
IPI08CN10N G
IPP08CN10N G
PG-TO220-3: Outline
Rev. 1.06
page 8
2008-06-23
IPB08CN10N G
IPI08CN10N G
IPP08CN10N G
PG-TO262-3-1 (I²PAK)
Rev. 1.06
page 9
2008-06-23
IPB08CN10N G
IPI08CN10N G
IPP08CN10N G
PG-TO-263 (D²-Pak)
Rev. 1.06
page 10
2008-06-23
IPB08CN10N G
IPI08CN10N G
IPP08CN10N G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.06
page 11
2008-06-23
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